Barrier-height and hot electron attenuation length measurements in Au-Si, Ag-Si and Al-Si diodes between 280-350K

Pelle B. and Kispéter József and Peiszner J.: Barrier-height and hot electron attenuation length measurements in Au-Si, Ag-Si and Al-Si diodes between 280-350K. In: Acta physica et chemica, (30) 1-2. pp. 39-52. (1984)

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Item Type: Article
Journal or Publication Title: Acta physica et chemica
Date: 1984
Volume: 30
Number: 1-2
ISSN: 0001-6721
Page Range: pp. 39-52
Language: English
Related URLs: http://acta.bibl.u-szeged.hu/39358/
Uncontrolled Keywords: Természettudomány, Fizika, Kémia
Additional Information: Bibliogr.: p. 51-52.; Ismertetett mű: B. Pelle-K. Kišpeter-J. Pejsner: Izmerenie vysoty Bar'era i zatuhaûŝego puti gorâčego èlektrona na diodah Au-Si, Ag-Si i Al-Si v temperaturnom intervale 280-350K
Date Deposited: 2016. Oct. 17. 09:25
Last Modified: 2021. Jun. 01. 12:06
URI: http://acta.bibl.u-szeged.hu/id/eprint/24233

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