Special points and ideal-vacancy-induced deep level in Si and some III-V semiconductors

Papp, György and Beleznay, Ferenc: Special points and ideal-vacancy-induced deep level in Si and some III-V semiconductors. Acta physica et chemica, (30) 3-4. pp. 121-126. (1984)

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Item Type: Article
Journal or Publication Title: Acta physica et chemica
Date: 1984
Volume: 30
Number: 3-4
Page Range: pp. 121-126
ISSN: 0001-6721
Language: angol
Uncontrolled Keywords: Természettudomány, Fizika, Kémia
Additional Information: Bibliogr.: 126. p.; Ismertetett mű: G. Papp-F. Beleznai: Special'nye točki i glubokie urovni navedennye vakansiâmi v Si i v nekotoryh poluprovodnikah tipa III-V
Date Deposited: 2016. Oct. 17. 09:25
Last Modified: 2016. Oct. 17. 09:25
URI: http://acta.bibl.u-szeged.hu/id/eprint/24242

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