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Michailovits Lehel; Török Miklós; Hevesi Imre: On the error of the absorption coefficients of weakly absorbing thin layers, determined from transmittance measurements. In: Acta physica et chemica, (34) 1-4. pp. 3-16. (1988)
Süli Árpád; Michailovits Lehel; Hevesi Imre: Determination of the thickness and the refractive index of V2O5 thin films from reflectance interference spectra. In: Acta physica et chemica, (25) 1-2. pp. 29-41. (1979)
Bali Katalin; Michailovits Lehel; Hevesi Imre: Preparation of amorphous V2O5 thin films by chemical vapour deposition method. In: Acta physica et chemica, (25) 1-2. pp. 43-45. (1979)
Bali Katalin; Michailovits Lehel; Hevesi Imre: Etching investigations on syngle crystals of V2O5. In: Acta physica et chemica, (23) 2-3. pp. 279-286. (1977)
Süli Árpád; Krumašev S. D.; Michailovits Lehel; Hevesi Imre: Photoconductivity of V2O5-Si sandwich system. In: Acta physica et chemica, (22) 1-4. pp. 45-55. (1976)
Süli Árpád; Michailovits Lehel; Liszt F.: Preparation and invesigation of thick Si(Li) p-i-n gamma detectors. In: Acta physica et chemica, (20) 3. pp. 333-350. (1974)
Süli Árpád; Michailovits Lehel: C.P.D. measurements on oxidized silicon surfaces. In: Acta physica et chemica, (18) 1-2. pp. 27-37. (1972)
Michailovits Lehel; Süli Árpád: Investigations on voltage distribution influenced by field effect of germanium-electrolyte interfaces. In: Acta physica et chemica, (16) 3-4. pp. 125-132. (1970)
Michailovits Lehel; Török Miklós: Some remarks on electrolytical etching of germanium surfaces. In: Acta physica et chemica, (16) 3-4. pp. 133-139. (1970)
Michailovits Lehel; Gyulai József; Járai J.: Surface recombination velocity measurements on surfaces of n-type germanium subjected to various gas cycles. In: Acta physica et chemica, (15) 3-4. pp. 95-98. (1969)
Gyulai József; Michailovits Lehel; Rauscher Eve: Improved flying spot method for determination of surface recombination velocity in semiconductors. In: Acta physica et chemica, (13) 3-4. pp. 99-102. (1967)
